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Takahashi, Masamitsu; Mizuki, Junichiro
Journal of Crystal Growth, 301-302, p.16 - 21, 2007/04
Times Cited Count：2 Percentile：27.92(Crystallography)Recently, sophisticated surface analysis tools including scanning probes and diffraction techniques have been applied to GaAs surfaces towards the understanding of the atomistics of the MBE growth process. Under growth conditions, GaAs surfaces are exposed to the gas phase of source materials and thus exchanges atoms with the environment. This situation brings abouta variety of surface reconstructions whose stoichiometry is different from that of the bulk, depending on growth parameters. Determination of the surface reconstructions under growth conditions is a key to understand the elemental process of MBE. In this paper, we report on in situ X-ray analysis of the (2
4) structure under true growth conditions and its structural changes induced by As incorporation.
Kaizu, Toshiyuki; Takahashi, Masamitsu; Yamaguchi, Koichi*; Mizuki, Junichiro
Journal of Crystal Growth, 301-302, p.248 - 251, 2007/04
Times Cited Count：13 Percentile：77.38(Crystallography)no abstracts in English
Bell, G.*; Quinn, P.*; Noakes, T.*; Bailey, P.*; Takahashi, Masamitsu
no journal, ,
Medium energy ion scattering (MEIS) has been used for some years as a powerful probe of semiconductor layer structures. In particular, MEIS energy spectra can be converted to depth profiles of different atomic species in a structure with vertical resolution approaching single atomic layer thickness. However, the application of MEIS to discrete nanostructures (zero- or one-dimensional objects, rather than two-dimensional layer structures) has been very limited. We have recently analyzied InAs-GaAs quantum dot (QD) structures grown by MBE using MEIS and derived the vertical In composition profile in them. In the present work, we extended these experiments to InAs-GaAs QDs grown under different conditions at the in situ MBE facility at SPring-8, Japan. We discuss the variation of In composition profiles obtained by different MBE growth conditions.
